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IL260/IL261/IL262
Absolute Maximum Ratings (1)
Parameters
Storage Temperature
Junction Temperature
Ambient Operating Temperature
Supply Voltage
Input Voltage
Output Voltage
Output Current Drive
Symbol
T S
T J
T A
V DD 1 ,V DD 2
V I
V O
I O
Min.
? 55
? 55
? 40
? 0.5
? 0.5
? 0.5
? 10
Typ.
Max.
150
150
85
7
V DD + 0.5
V DD + 0.5
10
Units
°C
°C
°C
V
V
V
mA
Test Conditions
Lead Solder Temperature
ESD
2
260
°C
kV
10 sec.
HBM
Recommended Operating Conditions
Parameters
Ambient Operating Temperature
Junction Temperature
Supply Voltage
Logic High Input Voltage
Logic Low Input Voltage
Symbol
T A
T J
V DD 1 ,V DD 2
V IH
V IL
Min.
? 40
? 40
3.0
2.4
0
Typ.
Max.
85
110
5.5
V DD
0.8
Units
°C
°C
V
V
V
Test Conditions
3.3/5.0 V Operation
Input Signal Rise and Fall Times
t IR , t IF
1
μ s
Insulation Specifications
Parameters
Creepage Distance
(external)
QSOP
0.15'' SOIC
0.3'' SOIC
Symbol
Min.
4.03
4.03
8.03
Typ.
8.3
Max.
Units
mm
Test Conditions
Per IEC 60601
Total Barrier Thickness (internal)
Leakage Current (5)
Barrier Resistance (5)
Barrier Capacitance (5)
Comparative Tracking Index
R IO
C IO
CTI
0.012
≥ 175
0.013
0.2
>10 14
5
mm
μ A RMS
?
pF
V
240 V RMS
500 V
f = 1 MHz
Per IEC 60112
High Voltage Endurance
(Maximum Barrier Voltage
for Indefinite Life)
Barrier Life
AC
DC
V IO
1000
1500
44000
V RMS
V DC
Years
At maximum
operating temperature
100°C, 1000 V RMS , 60%
CL activation energy
Thermal Characteristics
Parameter
Junction–Ambient
Thermal Resistance
Junction–Case (Top)
Thermal Resistance
QSOP
0.15" SOIC
0.3" SOIC
QSOP
0.15" SOIC
0.3" SOIC
Symbol
θ JA
Ψ JT
Min.
Typ.
60
60
60
10
10
20
Max.
Units
°C/W
°C/W
Test Conditions
Soldered to double-
sided board;
free air
QSOP
675
Power Dissipation
0.15" SOIC
0.3" SOIC
P D
700
800
mW
2
NVE Corporation
11409 Valley View Road, Eden Prairie, MN 55344-3617
Phone: (952) 829-9217
Fax: (952) 829-9189
www.IsoLoop.com
?NVE Corporation
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